Cambridge GaN Devices Announces Latest in Tutorial Webinar Series: 'The GaN Advantage in Applications'

Fourth episode in series broadcasts 5.00-6.00pm CET, Wednesday, 24th May: Click to Register.

Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, today announced the fourth in its series of webinar tutorials targeting designers, engineers and managers who are evaluating gallium nitride (GaN) power devices. At 5pm CET on Wednesday 24^th May, Peter Comiskey, Director of Applications Engineering, Cambridge GaN devices, will present ‘The ICeGaN™ Advantage in Applications’. A Q&A session will follow.

During this series, CGD’s GaN experts share their insights on GaN for efficient power conversion and how CGD’s HV technology, ICeGaN™, enables ease of use and delivers the highest performance. In the first instalment, ‘Powering up The Future with GaN’, Andrea Bricconi, Chief Commercial Officer, CGD introduced the basics of GaN, and positioned it in relation to traditional silicon solutions and silicon carbide (SiC), highlighting the potential benefits of the broad adoption of GaN. Following, in the second webinar, CGD’s CTO Florin Udrea discussed State-of-the-art architectures and future concepts in GaN technology for power electronics. The most recent webinar, ‘ICeGaN™: Enhancing the robustness, reliability and quality of GaN’ was presented by VP Operations, Zahid Ansari, and explained how CGD’s ICeGaN HEMTs integrate features which enhance both robustness and reliability of GaN power ICs, and how CGD’s manufacturing processes have been designed for quality and continuous improvement.

CGD’s ICeGaN 650 V GaN ICs are single-chip eMode HEMT devices that can be driven like a MOSFET, without the need for special gate drivers, complex and lossy driving circuits, negative voltage supply requirements or additional clamping components. Recently the company introduced Series Two ICeGaN devices with best-in-class robustness, ease-of-use & high efficiency.

Peter Comiskey has more than 25 years of experience in the design and development of advanced power electronic products for high reliability & high-volume applications. He has held various senior engineering, project management & executive management roles supporting the development of high-power electronic products with Automotive 1st tiers and OEMs. Peter leads the Cambridge GaN Devices Application Engineering team, helping customers & development partners globally successfully integrate their GaN devices into new designs.

To register for the upcoming webinar, please click here. The webinars will also be available to view or download from CGD’s website.

ENDS

About Cambridge GaN Devices

Cambridge GaN Devices (CGD) is a fabless semiconductor company spun-out by Professor Florin Udrea and Dr Giorgia Longobardi from Cambridge University in 2016 to exploit a revolutionary technology in power devices. Now in the scale-up phase, our mission is to bring innovation into everyday life by delivering effortless energy-efficient GaN solutions. CGD designs, develops and commercialises GaN transistors and ICs enabling a radical step change in energy efficiency and compactness and is suitable for high volume production. CGD’s ICeGaN™ technology is protected by a strong IP portfolio which constantly grows based on the company's leading innovation skills and ambitions. In addition to the multi-million seed fund and Series A and B investment rounds, CGD has so far successfully secured four projects funded by iUK, BEIS and EU (Penta). The technical and commercial expertise of the CGD team combined with an extensive track record in the power electronics market has been fundamental in early market traction of its proprietary technology.

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