Cambridge GaN Devices Presents the Sustainable Future of Power Electronics Now, at APEC 2023

Sunday 19^th to Thursday 23^rd March, Orange County Convention Center, Orlando, Florida

Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, will present several papers at the Applied Power Electronics Conference (APEC) covering strategic views on sustainability and deep-dive technology analysis. Executives from the company will chair two sessions, and on booth 305, CGD will present demos using proven reference designs and evaluation boards plus new and established GaN eco-system partnerships.

CGD will present four papers at APEC:

• Tuesday 21st March, 11.05AM-11.30AM – ‘An Overview of GaN Dynamic Rds(ON) and Quantifying Performance Benefits of 0V GOFF in Real Applications’, with Peter Comiskey, Director of Applications Engineering at CGD.
• Tuesday 21st March, 11.05AM-11.30AM – ‘Meeting Carbon Goals with GaN’, with Giorgia Longobardi, CEO, CGD.
• Tuesday 21st March, 1.30PM-2.00PM - Exhibitor Seminar: ‘ICeGaN™ 650V Power GaN ICs bring efficiency, robustness and reliability for high power applications to the next level’, with Giorgia Longobardi, CEO, CGD.
• Thu 23^rd March, 3PM-3.25PM – ‘A GaN HEMT with Exceptional Gate Overvoltage Robustness’, with Virginia Tech University and Daniel Popa, Director of Innovation & Research, CGD.

Peter DiMaso, VP Business Development Americas will chair session IS19, WBG applications, at 8.30AM (EST) on Thursday 23^rd March, and Peter Comiskey, Director of Applications Engineering will chair session IS25 on Wide Bandgap (WBG) devices at 1.45 PM (EST), also on Thursday 23^rd March.

On booth 305, CGD will present a range of demos designed to showcase industry’s first easy-to-use and scalable 650 V GaN HEMT family. ICeGaN™ H1 single-chip eMode HEMTs can be driven like a MOSFET, without the need for special gate drivers, complex and lossy driving circuits, negative voltage supply requirements or additional clamping components. The displays include half-bridge, 350W LLC, 350W PFC, 65W QRF and 3kW LLC evaluation circuits, plus a thermal demo and an example of a 3kV photo voltaic solar inverter developed using GaN in partnership with Neways.

ENDS

About Cambridge GaN Devices

Cambridge GaN Devices (CGD) is a fabless semiconductor company spun-out by Professor Florin Udrea and Dr Giorgia Longobardi from Cambridge University in 2016 to exploit a revolutionary technology in power devices. Now in the scale-up phase, our mission is to bring innovation into everyday life by delivering effortless energy-efficient GaN solutions. CGD designs, develops and commercialises GaN transistors and ICs enabling a radical step change in energy efficiency and compactness and is suitable for high volume production. CGD’s ICeGaN™ technology is protected by a strong IP portfolio which constantly grows based on the company's leading innovation skills and ambitions. In addition to the multi-million seed fund and Series A and B private investments, CGD has so far successfully secured four projects funded by iUK, BEIS and EU (Penta). The technical and commercial expertise of the CGD team combined with an extensive track record in the power electronics market has been fundamental in early market traction of its proprietary technology.

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